![SI8904EDB-T2-E1 Cover](http://media.oemstron.com/oemstron/datasheet/sm/si8904edb-t2-e1-0001.jpg)
Datasheet | SI8904EDB-T2-E1 |
File Size | 100.1 KB |
Total Pages | 6 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SI8904EDB-T2-E1 |
Description | MOSFET 2N-CH 30V 3.8A 6-MFP |
SI8904EDB-T2-E1 - Vishay Siliconix
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![SI8904EDB-T2-E1 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/si8904edb-t2-e1-0006.jpg)
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SI8904EDB-T2-E1 | Vishay Siliconix | MOSFET 2N-CH 30V 3.8A 6-MFP | 403 More on Order |
URL Link
www.oemstron.com/datasheet/SI8904EDB-T2-E1
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.8A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-MICRO FOOT®CSP Supplier Device Package 6-Micro Foot™ (2.36x1.56) |