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SI9934BDY-T1-GE3 Datasheet

SI9934BDY-T1-GE3 Cover
DatasheetSI9934BDY-T1-GE3
File Size91.07 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI9934BDY-T1-GE3, SI9934BDY-T1-E3
Description MOSFET 2P-CH 12V 4.8A 8SOIC, MOSFET 2P-CH 12V 4.8A 8-SOIC

SI9934BDY-T1-GE3 - Vishay Siliconix

SI9934BDY-T1-GE3 Datasheet Page 1
SI9934BDY-T1-GE3 Datasheet Page 2
SI9934BDY-T1-GE3 Datasheet Page 3
SI9934BDY-T1-GE3 Datasheet Page 4
SI9934BDY-T1-GE3 Datasheet Page 5
SI9934BDY-T1-GE3 Datasheet Page 6

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SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8SOIC 265

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SI9934BDY-T1-E3 SI9934BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8-SOIC 156

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URL Link

SI9934BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.8A

Rds On (Max) @ Id, Vgs

35mOhm @ 6.4A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI9934BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.8A

Rds On (Max) @ Id, Vgs

35mOhm @ 6.4A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO