Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIA427DJ-T1-GE3 |
| File Size | 221.71 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA427DJ-T1-GE3 |
| Description | MOSFET P-CH 8V 12A SC-70-6 |
SIA427DJ-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIA427DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 12A SC-70-6 | 89432 More on Order |
URL Link
www.oemstron.com/datasheet/SIA427DJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 16mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 4V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |