Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SIA430DJ-T4-GE3 Datasheet

SIA430DJ-T4-GE3 Cover
DatasheetSIA430DJ-T4-GE3
File Size181.88 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIA430DJ-T4-GE3
Description MOSFET N-CH 20V SC-70-6

SIA430DJ-T4-GE3 - Vishay Siliconix

SIA430DJ-T4-GE3 Datasheet Page 1
SIA430DJ-T4-GE3 Datasheet Page 2
SIA430DJ-T4-GE3 Datasheet Page 3
SIA430DJ-T4-GE3 Datasheet Page 4
SIA430DJ-T4-GE3 Datasheet Page 5
SIA430DJ-T4-GE3 Datasheet Page 6
SIA430DJ-T4-GE3 Datasheet Page 7
SIA430DJ-T4-GE3 Datasheet Page 8
SIA430DJ-T4-GE3 Datasheet Page 9

The Products You May Be Interested In

SIA430DJ-T4-GE3 SIA430DJ-T4-GE3 Vishay Siliconix MOSFET N-CH 20V SC-70-6 142

More on Order

URL Link

SIA430DJ-T4-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6