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| Datasheet | SIA810DJ-T1-E3 |
| File Size | 128.63 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIA810DJ-T1-E3, SIA810DJ-T1-GE3 |
| Description | MOSFET N-CH 20V 4.5A SC-70-6, MOSFET N-CH 20V 4.5A SC70-6 |
SIA810DJ-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |
Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |