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| Datasheet | SIA910EDJ-T1-GE3 |
| File Size | 275.6 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA910EDJ-T1-GE3 |
| Description | MOSFET 2N-CH 12V 4.5A SC-70-6 |
SIA910EDJ-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIA910EDJ-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 28mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |