Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIA914DJ-T1-GE3 |
| File Size | 142.51 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIA914DJ-T1-GE3, SIA914DJ-T1-E3 |
| Description | MOSFET 2N-CH 20V 4.5A SC70-6, MOSFET 2N-CH 20V 4.5A SC70-6 |
SIA914DJ-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIA914DJ-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 4.5A SC70-6 | 268 More on Order |
 |
SIA914DJ-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 4.5A SC70-6 | 332 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V Power - Max 6.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V Power - Max 6.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |