![SIAA00DJ-T1-GE3 Cover](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0001.jpg)
Datasheet | SIAA00DJ-T1-GE3 |
File Size | 265.6 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SIAA00DJ-T1-GE3, SIAA40DJ-T1-GE3 |
Description | MOSFET N-CHAN 25V, MOSFET N-CH 40V 30A SC70-6 |
SIAA00DJ-T1-GE3 - Vishay Siliconix
![SIAA00DJ-T1-GE3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0001.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0002.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0003.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0004.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0005.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0006.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0007.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0008.jpg)
![SIAA00DJ-T1-GE3 Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/siaa00dj-t1-ge3-0009.jpg)
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URL Link
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 20.1A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) +16V, -12V Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 12.5V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V FET Feature - Power Dissipation (Max) 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |