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| Datasheet | SIB912DK-T1-GE3 |
| File Size | 231.86 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIB912DK-T1-GE3 |
| Description | MOSFET 2N-CH 20V 1.5A SC-75-6 |
SIB912DK-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIB912DK-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 216mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 95pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-75-6L Dual Supplier Device Package PowerPAK® SC-75-6L Dual |