![SIDC14D60C6Y Cover](http://media.oemstron.com/oemstron/datasheet/sm/sidc14d60c6y-0001.jpg)
Datasheet | SIDC14D60C6Y |
File Size | 56.56 KB |
Total Pages | 4 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SIDC14D60C6Y, SIDC14D60C6 |
Description | DIODE GEN PURP 600V 50A WAFER, DIODE GEN PURP 600V 50A WAFER |
SIDC14D60C6Y - Infineon Technologies
![SIDC14D60C6Y Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sidc14d60c6y-0001.jpg)
![SIDC14D60C6Y Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sidc14d60c6y-0002.jpg)
![SIDC14D60C6Y Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sidc14d60c6y-0003.jpg)
![SIDC14D60C6Y Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sidc14d60c6y-0004.jpg)
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URL Link
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 50A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 50A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 50A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 50A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |