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Datasheet | SIDC19D60SIC3 |
File Size | 54.27 KB |
Total Pages | 4 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIDC19D60SIC3 |
Description | DIODE SCHOTTKY 600V 6A WAFER |
SIDC19D60SIC3 - Infineon Technologies
![SIDC19D60SIC3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sidc19d60sic3-0001.jpg)
![SIDC19D60SIC3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sidc19d60sic3-0002.jpg)
![SIDC19D60SIC3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sidc19d60sic3-0003.jpg)
![SIDC19D60SIC3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sidc19d60sic3-0004.jpg)
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SIDC19D60SIC3 | Infineon Technologies | DIODE SCHOTTKY 600V 6A WAFER | 137 More on Order |
URL Link
www.oemstron.com/datasheet/SIDC19D60SIC3
Manufacturer Infineon Technologies Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 300pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 175°C |