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| Datasheet | SIDC24D30SIC3 |
| File Size | 57.52 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIDC24D30SIC3 |
| Description | DIODE SILICON 300V 10A WAFER |
SIDC24D30SIC3 - Infineon Technologies
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SIDC24D30SIC3 | Infineon Technologies | DIODE SILICON 300V 10A WAFER | 234 More on Order |
URL Link
www.oemstron.com/datasheet/SIDC24D30SIC3
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Manufacturer Infineon Technologies Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 300V Capacitance @ Vr, F 600pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 175°C |