![SIDC50D60C6X1SA1 Cover](http://media.oemstron.com/oemstron/datasheet/sm/sidc50d60c6x1sa1-0001.jpg)
Datasheet | SIDC50D60C6X1SA1 |
File Size | 56.12 KB |
Total Pages | 4 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIDC50D60C6X1SA1 |
Description | DIODE GEN PURP 600V 200A WAFER |
SIDC50D60C6X1SA1 - Infineon Technologies
![SIDC50D60C6X1SA1 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sidc50d60c6x1sa1-0001.jpg)
![SIDC50D60C6X1SA1 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sidc50d60c6x1sa1-0002.jpg)
![SIDC50D60C6X1SA1 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sidc50d60c6x1sa1-0003.jpg)
![SIDC50D60C6X1SA1 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sidc50d60c6x1sa1-0004.jpg)
The Products You May Be Interested In
![]() |
SIDC50D60C6X1SA1 | Infineon Technologies | DIODE GEN PURP 600V 200A WAFER | 203 More on Order |
URL Link
www.oemstron.com/datasheet/SIDC50D60C6X1SA1
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |