![SIDC81D120H6X1SA2 Cover](http://media.oemstron.com/oemstron/datasheet/sm/sidc81d120h6x1sa2-0001.jpg)
Datasheet | SIDC81D120H6X1SA2 |
File Size | 63.3 KB |
Total Pages | 4 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIDC81D120H6X1SA2 |
Description | DIODE GEN PURP 1.2KV 150A WAFER |
SIDC81D120H6X1SA2 - Infineon Technologies
![SIDC81D120H6X1SA2 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sidc81d120h6x1sa2-0001.jpg)
![SIDC81D120H6X1SA2 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sidc81d120h6x1sa2-0002.jpg)
![SIDC81D120H6X1SA2 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sidc81d120h6x1sa2-0003.jpg)
![SIDC81D120H6X1SA2 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sidc81d120h6x1sa2-0004.jpg)
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SIDC81D120H6X1SA2 | Infineon Technologies | DIODE GEN PURP 1.2KV 150A WAFER | 208 More on Order |
URL Link
www.oemstron.com/datasheet/SIDC81D120H6X1SA2
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 150A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 150A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 150°C |