![SIDR392DP-T1-GE3 Cover](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0001.jpg)
Datasheet | SIDR392DP-T1-GE3 |
File Size | 211.3 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | SIDR392DP-T1-GE3, SIDR390DP-T1-RE3, SIDR390DP-T1-GE3 |
Description | MOSFET N-CHAN 30V, MOSFET N-CH 30V POWERPAK SO-8DC, MOSFET N-CHAN 30V POWERPAK SO-8D |
SIDR392DP-T1-GE3 - Vishay Siliconix
![SIDR392DP-T1-GE3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0001.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0002.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0003.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0004.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0005.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0006.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0007.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0008.jpg)
![SIDR392DP-T1-GE3 Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/sidr392dp-t1-ge3-0009.jpg)
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URL Link
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 69.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 10180pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 69.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 10180pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8 |