Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIDR610DP-T1-GE3 |
| File Size | 225.87 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIDR610DP-T1-GE3 |
| Description | MOSFET N-CHAN 200V PPAK SO-8DC |
SIDR610DP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIDR610DP-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 200V PPAK SO-8DC | 9968 More on Order |
URL Link
www.oemstron.com/datasheet/SIDR610DP-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 39.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 100V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8 |