![SIHF15N60E-GE3 Cover](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0001.jpg)
Datasheet | SIHF15N60E-GE3 |
File Size | 171.1 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SIHF15N60E-GE3, SIHF15N60E-E3 |
Description | MOSFET N-CH 600V 15A TO220 FULLP, MOSFET N-CH 600V 15A TO220 FULLP |
SIHF15N60E-GE3 - Vishay Siliconix
![SIHF15N60E-GE3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0001.jpg)
![SIHF15N60E-GE3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0002.jpg)
![SIHF15N60E-GE3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0003.jpg)
![SIHF15N60E-GE3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0004.jpg)
![SIHF15N60E-GE3 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0005.jpg)
![SIHF15N60E-GE3 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0006.jpg)
![SIHF15N60E-GE3 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0007.jpg)
![SIHF15N60E-GE3 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/sihf15n60e-ge3-0008.jpg)
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URL Link
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 100V FET Feature - Power Dissipation (Max) 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 100V FET Feature - Power Dissipation (Max) 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |