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| Datasheet | SIHF35N60EF-GE3 |
| File Size | 149.19 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHF35N60EF-GE3 |
| Description | MOSFET N-CH TO-220 FULLPAK |
SIHF35N60EF-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIHF35N60EF-GE3
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Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2568pF @ 100V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |