Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHL630STRL-GE3 |
| File Size | 243.5 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | SIHL630STRL-GE3, IRL630STRRPBF, IRL630STRLPBF, IRL630SPBF |
| Description | MOSFET N-CH 200V D2PAK TO-263, MOSFET N-CH 200V 9A D2PAK, MOSFET N-CH 200V 9A D2PAK, MOSFET N-CH 200V 9A D2PAK |
SIHL630STRL-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHL630STRL-GE3 | Vishay Siliconix | MOSFET N-CH 200V D2PAK TO-263 | 260 More on Order |
 |
IRL630STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | 210 More on Order |
 |
IRL630STRLPBF | Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | 265 More on Order |
 |
IRL630SPBF | Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | 10540 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |