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| Datasheet | SIHS90N65E-E3 |
| File Size | 131.21 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHS90N65E-E3 |
| Description | MOSFET N-CH 650V 87A SUPER247 |
SIHS90N65E-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIHS90N65E-E3
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 87A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 591nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11826pF @ 100V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-247™ (TO-274AA) Package / Case TO-247-3 |