Datasheet | SIR872DP-T1-GE3 |
File Size | 335.41 KB |
Total Pages | 13 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIR872DP-T1-GE3 |
Description | MOSFET N-CH 150V 53.7A PPAK SO-8 |
SIR872DP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
SIR872DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 53.7A PPAK SO-8 | 451 More on Order |
URL Link
www.oemstron.com/datasheet/SIR872DP-T1-GE3
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 75V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |