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| Datasheet | SIRA00DP-T1-GE3 |
| File Size | 326.24 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIRA00DP-T1-GE3 |
| Description | MOSFET N-CH 30V 100A PPAK SO-8 |
SIRA00DP-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIRA00DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |