Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIRC06DP-T1-GE3 |
| File Size | 204.63 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIRC06DP-T1-GE3 |
| Description | MOSFET N-CH 30V |
SIRC06DP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIRC06DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V | 8128 More on Order |
URL Link
www.oemstron.com/datasheet/SIRC06DP-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 32A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 2455pF @ 15V FET Feature Schottky Diode (Body) Power Dissipation (Max) 5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |