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| Datasheet | SIS902DN-T1-GE3 |
| File Size | 93.43 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIS902DN-T1-GE3 |
| Description | MOSFET 2N-CH 75V 4A PPAK 1212-8 |
SIS902DN-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIS902DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 186mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 38V Power - Max 15.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |