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| Datasheet | SISA40DN-T1-GE3 |
| File Size | 241.62 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISA40DN-T1-GE3 |
| Description | MOSFET N-CH 20V PPAK 1212-8 |
SISA40DN-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SISA40DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 43.7A (Ta), 162A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) +12V, -8V Input Capacitance (Ciss) (Max) @ Vds 3415pF @ 10V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |