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| Datasheet | SISF20DN-T1-GE3 |
| File Size | 229.65 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISF20DN-T1-GE3 |
| Description | MOSFET DL N-CH 60V PPK 1212-8SCD |
SISF20DN-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SISF20DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs 13mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 30V Power - Max 5.2W (Ta), 69.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8SCD Supplier Device Package PowerPAK® 1212-8SCD |