Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SISS10DN-T1-GE3 |
| File Size | 325.31 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISS10DN-T1-GE3 |
| Description | MOSFET N-CH 40V 60A PPAK 1212-8S |
SISS10DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SISS10DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 1212-8S | 7872 More on Order |
URL Link
www.oemstron.com/datasheet/SISS10DN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 20V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S |