Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SISS26DN-T1-GE3 |
| File Size | 298.35 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISS26DN-T1-GE3 |
| Description | MOSFET N-CHANNEL 60V 60A 1212-8S |
SISS26DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SISS26DN-T1-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 60V 60A 1212-8S | 16793 More on Order |
URL Link
www.oemstron.com/datasheet/SISS26DN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S |