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| Datasheet | SISS26LDN-T1-GE3 |
| File Size | 263.01 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISS26LDN-T1-GE3 |
| Description | MOSFET N-CH 60V 81.2A PP 1212-8S |
SISS26LDN-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SISS26LDN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 81.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1980pF @ 30V FET Feature - Power Dissipation (Max) 4.8W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S Package / Case PowerPAK® 1212-8S |