Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SISS98DN-T1-GE3 |
| File Size | 341.09 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISS98DN-T1-GE3 |
| Description | MOSFET N-CH 200V 14.1A 1212-8 |
SISS98DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SISS98DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 200V 14.1A 1212-8 | 3826 More on Order |
URL Link
www.oemstron.com/datasheet/SISS98DN-T1-GE3
|
Manufacturer Vishay Siliconix Series ThunderFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 14.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 7.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 608pF @ 100V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |