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| Datasheet | SIZ700DT-T1-GE3 |
| File Size | 207.74 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIZ700DT-T1-GE3 |
| Description | MOSFET 2N-CH 20V 16A PPAK 1212-8 |
SIZ700DT-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIZ700DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A Rds On (Max) @ Id, Vgs 8.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V Power - Max 2.36W, 2.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-PowerPair™ Supplier Device Package 6-PowerPair™ |