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| Datasheet | SIZ730DT-T1-GE3 |
| File Size | 210.84 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIZ730DT-T1-GE3 |
| Description | MOSFET 2N-CH 30V 16A 6-POWERPAIR |
SIZ730DT-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIZ730DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A, 35A Rds On (Max) @ Id, Vgs 9.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 15V Power - Max 27W, 48W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-PowerPair™ Supplier Device Package 6-PowerPair™ |