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| Datasheet | SIZ900DT-T1-GE3 |
| File Size | 204.19 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIZ900DT-T1-GE3 |
| Description | MOSFET 2N-CH 30V 24A POWERPAIR |
SIZ900DT-T1-GE3 - Vishay Siliconix
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SIZ900DT-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 24A POWERPAIR | 426 More on Order |
URL Link
www.oemstron.com/datasheet/SIZ900DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 24A, 28A Rds On (Max) @ Id, Vgs 7.2mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 15V Power - Max 48W, 100W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-PowerPair™ Supplier Device Package 6-PowerPair™ |