Datasheet | SIZ920DT-T1-GE3 |
File Size | 212.52 KB |
Total Pages | 14 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIZ920DT-T1-GE3 |
Description | MOSFET 2N-CH 30V 40A PWRPAIR |
SIZ920DT-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIZ920DT-T1-GE3
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A Rds On (Max) @ Id, Vgs 7.1mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 15V Power - Max 39W, 100W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |