Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SPD35N10 |
| File Size | 556.03 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SPD35N10 |
| Description | MOSFET N-CH 100V 35A DPAK |
SPD35N10 - Infineon Technologies
The Products You May Be Interested In
 |
SPD35N10 | Infineon Technologies | MOSFET N-CH 100V 35A DPAK | 333 More on Order |
URL Link
www.oemstron.com/datasheet/SPD35N10
|
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |