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SPI08N80C3 Datasheet

SPI08N80C3 Cover
DatasheetSPI08N80C3
File Size463.16 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SPI08N80C3
Description MOSFET N-CH 800V 8A TO262-3

SPI08N80C3 - Infineon Technologies

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SPI08N80C3 SPI08N80C3 Infineon Technologies MOSFET N-CH 800V 8A TO262-3 492

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URL Link

SPI08N80C3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 470µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 100V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA