![SPP80N06S2L-05 Cover](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0001.jpg)
Datasheet | SPP80N06S2L-05 |
File Size | 415.79 KB |
Total Pages | 8 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | SPP80N06S2L-05, SPI80N06S2L-05, SPB80N06S2L-05 |
Description | MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A I2PAK, MOSFET N-CH 55V 80A D2PAK |
SPP80N06S2L-05 - Infineon Technologies
![SPP80N06S2L-05 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0001.jpg)
![SPP80N06S2L-05 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0002.jpg)
![SPP80N06S2L-05 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0003.jpg)
![SPP80N06S2L-05 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0004.jpg)
![SPP80N06S2L-05 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0005.jpg)
![SPP80N06S2L-05 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0006.jpg)
![SPP80N06S2L-05 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0007.jpg)
![SPP80N06S2L-05 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/spp80n06s2l-05-0008.jpg)
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URL Link
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7530pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7530pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7530pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |