Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SPP80N06S2L-09 |
| File Size | 311.21 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SPP80N06S2L-09, SPB80N06S2L-09 |
| Description | MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A D2PAK |
SPP80N06S2L-09 - Infineon Technologies
The Products You May Be Interested In
 |
SPP80N06S2L-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | 423 More on Order |
 |
SPB80N06S2L-09 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | 394 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 52A, 10V Vgs(th) (Max) @ Id 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 52A, 10V Vgs(th) (Max) @ Id 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |