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| Datasheet | SPS02N60C3 |
| File Size | 1,186.11 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SPS02N60C3 |
| Description | MOSFET N-CH 650V 1.8A TO251-3 |
SPS02N60C3 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/SPS02N60C3
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id 3.9V @ 80µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak |