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SQ1470AEH-T1_GE3 Datasheet

SQ1470AEH-T1_GE3 Cover
DatasheetSQ1470AEH-T1_GE3
File Size277.48 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ1470AEH-T1_GE3
Description MOSFET N-CH 30V 2.8A SC70

SQ1470AEH-T1_GE3 - Vishay Siliconix

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The Products You May Be Interested In

SQ1470AEH-T1_GE3 SQ1470AEH-T1_GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 316

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URL Link

SQ1470AEH-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.3W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-363, SC70

Package / Case

6-TSSOP, SC-88, SOT-363