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| Datasheet | SQ1563AEH-T1_GE3 |
| File Size | 294.28 KB |
| Total Pages | 15 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ1563AEH-T1_GE3 |
| Description | MOSFET N/P-CH 20V POWERPAKSC70-6 |
SQ1563AEH-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ1563AEH-T1_GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 850mA (Tc) Rds On (Max) @ Id, Vgs 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V, 1.33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 89pF @ 10V, 84pF @ 10V Power - Max 1.5W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |