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| Datasheet | SQ1912AEEH-T1_GE3 |
| File Size | 279.59 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ1912AEEH-T1_GE3 |
| Description | MOSFET 2N-CH 20V POWERPAK SC70-6 |
SQ1912AEEH-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ1912AEEH-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Rds On (Max) @ Id, Vgs 280mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 27pF @ 10V Power - Max 1.5W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |