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| Datasheet | SQ1922EEH-T1_GE3 |
| File Size | 206.77 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ1922EEH-T1_GE3 |
| Description | MOSFET 2N-CH 20V SC70-6 |
SQ1922EEH-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ1922EEH-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 840mA (Tc) Rds On (Max) @ Id, Vgs 350mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V Power - Max 1.5W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 |