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| Datasheet | SQ2301ES-T1_GE3 |
| File Size | 237.91 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ2301ES-T1_GE3 |
| Description | MOSFET P-CH 20V 3.9A TO236 |
SQ2301ES-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ2301ES-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 425pF @ 10V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 175°C (TA) Mounting Type Surface Mount Supplier Device Package TO-236 (SOT-23) Package / Case TO-236-3, SC-59, SOT-23-3 |