Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQ2310ES-T1_GE3 |
| File Size | 223.41 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ2310ES-T1_GE3 |
| Description | MOSFET N-CH 20V 6A SOT23 |
SQ2310ES-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQ2310ES-T1_GE3 | Vishay Siliconix | MOSFET N-CH 20V 6A SOT23 | 130523 More on Order |
URL Link
www.oemstron.com/datasheet/SQ2310ES-T1_GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 485pF @ 10V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3 |