Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQ2337ES-T1_GE3 |
| File Size | 219.99 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ2337ES-T1_GE3 |
| Description | MOSFET P-CHAN 80V SOT23 |
SQ2337ES-T1_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQ2337ES-T1_GE3 | Vishay Siliconix | MOSFET P-CHAN 80V SOT23 | 290 More on Order |
URL Link
www.oemstron.com/datasheet/SQ2337ES-T1_GE3
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 290mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |