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| Datasheet | SQ3425EV-T1_GE3 |
| File Size | 251.9 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ3425EV-T1_GE3 |
| Description | MOSFET P-CHANNEL 20V 7.4A 6TSOP |
SQ3425EV-T1_GE3 - Vishay Siliconix
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SQ3425EV-T1_GE3 | Vishay Siliconix | MOSFET P-CHANNEL 20V 7.4A 6TSOP | 4807 More on Order |
URL Link
www.oemstron.com/datasheet/SQ3425EV-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |