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SQ3442EV-T1-GE3 Datasheet

SQ3442EV-T1-GE3 Cover
DatasheetSQ3442EV-T1-GE3
File Size111.8 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQ3442EV-T1-GE3
Description MOSFET N-CH 20V 4.3A 6TSOP

SQ3442EV-T1-GE3 - Vishay Siliconix

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URL Link

SQ3442EV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6