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| Datasheet | SQ3985EV-T1_GE3 |
| File Size | 259.43 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ3985EV-T1_GE3 |
| Description | MOSFET 2 P-CH 20V 3.9A 6TSOP |
SQ3985EV-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ3985EV-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Rds On (Max) @ Id, Vgs 145mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V Power - Max 3W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |