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| Datasheet | SQ3989EV-T1_GE3 |
| File Size | 137.67 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQ3989EV-T1_GE3 |
| Description | MOSFET 2 P-CH 30V 2.5A 6TSOP |
SQ3989EV-T1_GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SQ3989EV-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Rds On (Max) @ Id, Vgs 155mOhm @ 400mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.67W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |